CAMECA
CAMECA e-newsletter - November 2011 AMETEK

Welcome to the 6th issue of the CAMECA electronic newsletter. 2011 has been a really exciting year for CAMECA, marked by two major product releases that received excellent response from our users as well as from major players in the scientific community and in industry. You are happy to give you a brief overview of these new releases and to report on several other new developments and applications at CAMECA. Don't hesitate to contact us for more details!

 


SXFive & SXFiveFE: CAMECA's new EPMA

SXFiveFE RELEASE: THE CAMECA EPMA EXPERTISE
NOW WITH FIELD EMISSION SOURCE

SXFiveFECAMECA's fifth generation Electron Probe MicroAnalyzer was unveiled at the EMAS conference in Angers, France, in May. The new EPMA platform is available in two configurations: SXFive with W and LaB6 sources, SXFiveFE with Field Emission source.

We have optimized the performance of both instruments for challenging microanalytical applications at sub-micron spatial resolution. Equipped with our industry-leading high-sensitivity spectrometers ensuring benchmark reproducibility, the instrument delivers highest quality quantitative analysis of trace and minor elements. In addition, it offers full automation for long-term unattended analysis and benefits from reliability improvements from our automated LEXES metrology tool for the semiconductor industry.

 

A new 12-page brochure provides full details on instrumental advances and analytical capabilities of the SXFive and SXFiveFE. Available on request!

AMONG THE FIRST
SXFive USERS

The first SXFive has been successfully installed at CAMPARIS Center for Microanalysis at Pierre et Marie Curie University. The new instrument will increase CAMPARIS's ability to support mineralogists and geologists in this well-known university.

Our new EPMA has already been selected by more than 10 organizations, among which the National Institute of Oceanography in Goa, India, Adelaide Microscropy, a multi-user facility serving three Universities in Adelaide and the research community in South Australia, De Beers Group Exploration Laboratory Services, South Africa and BRGM, France's leading institute in earth science applications.

 


Shallow Probe EX-300 Semiconductor Metrology Tool

YEAR 2011: EX-300 RELEASE
A MILESTONE FOR THE CAMECA SHALLOW PROBE

EX-300Proud of 10 years of experience in semiconductor metrology with the Shallow Probe LEXFAB-300, CAMECA delivered a new, fully mature tool: the EX-300. The worldwide release at SEMICON Korea last February was followed by a batch of orders from TSMC and several other memory and logic manufacturers. This rapid and complete success confirms the adoption of LEXES as a standard for SC process control.

One of the main applications of the EX-300 is front-end process control of Si epitaxial layers at 22nm and beyond. Indeed the integration of Si epitaxy in the S/D and channel regions has become an increasingly acute challenge for advanced MOSFET development due to loading effects and relaxation that make traditional techniques
inefficient. The EX-300 provides compositional metrology for all elements, heavy and light (Ge, P, C and B) in single or multi-layers stacks. The tool is able to perform global mapping of blanket or patterned wafers, controls composition (from a few at% to far beyond Ge 35at%), and thickness (with no limiting factor in terms of thickness or relaxation).

 

For more details on the EX-300 tool and its diverse applications in strain engineering, memories, HKMG, dopant metrology... request the new EX-300 brochure!

METROLOGY OF LEDS

WITH EX-300

Our LEXES based EX-300 system is the ideal solution to perform quality control of high brightness LED structures and to support ramping up phases towards larger substrate sizes.
lexes-led
The EX-300 monitors dopants such as Mg, Al and In on full wafers with excellent precision.

 


News from our Atom Probe Tomography (APT) product line

MULTIPLE ORDERS & APPLICATIONS
FOR THE LEAP 4000X

Atom Probe Tomography performs 3D quantitative elemental analysis with near-atomic spatial resolution. Capable to analyze metals, semiconductors, and now oxides, APT continues to receive great success as a new technique perfectly complementing TEM and SIMS information. CAMECA has already received seven LEAP 4000 orders in 2011, in a large variety of applications, among which metals (Tohoku University, Japan), nuclear science (CEA-Saclay, France), materials sciences (Harvard University, USA; Colorado School of Mines, USA; Tohoku University, Japan), LEDs (SOCLED, Korea) and Microelectronics (Hynix, Korea).


APT-FET

Among its numerous applications, APT is expected to become one of the key techniques for the characterization of next generation FET transistors. Indeed in the race for performance improvement these ultra-small devices can now be built in 3 dimensions: they are no longer limited to planar geometry. 3D analytical tools have become required at sub-nm resolution to measure single transistors. The image shown displays a 2D section of a 3D transistor (FINFET), extracted from A.K. Kambham, et al., Ultramicroscopy (2011), recorded at IMEC, Leuven, Belgium. APT is used to help the researchers to develop conformal (=uniform) doping strategy of such nanoscale 3D structure.

COMBINED ATOM PROBE/STEM
AT COLORADO SCHOOL OF MINES

For many years, the holy grail of materials characterization has been measuring properties with high chemical resolution (parts per billion), high spatial resolution (sub nm), and high temporal resolution (sub ns). Professors B. Gorman and M. Kaufman of the Colorado School of Mines, USA have been funded by the US National Science Foundation to demonstrate such an instrument, capable of coupling <1 ns temporal resolution laser pump – electron diffraction probe experiments with atomic-scale spatial and chemical resolution atom probe tomography. This exciting instrument will incorporate a 30kV scanning transmission electron microscope(STEM) onto a CAMECA LEAP 4000X Si atom probe. We look forward to the first experiments planned for the summer of 2012!

 


News from our SIMS & NanoSIMS product line

R&D OF NOVEL LED DEVICES WITH CAMECA SIMS

The CAMECA SIMS instruments are key tools for R&D of novel LED devices, as they provide depth profiles with excellent detection limits for dopants and impurities, together with high analysis throughput. They are particularly attractive for the analysis of light elements, for which CAMECA SIMS detection limits clearly outdo the capabilities of competing instruments and techniques.
LED R&D with SIMSData on dopant (Mg, Si) and impurity species (H, C, O) obtained using the IMS 7f in GaN-based LED samples have been presented during the SIMS XVIII conference in Riva del Garda, Italy, September 2011.
For more information, you may request a pdf of our new SIMS for LEDs application note!



OPTIMIZED PARTICLE IDENTIFICATON IN SIMS

WITH NEW APM VERSION

EXLIEA new APM (Automated Particle Measurement) software version has just been developed. Particle screening and identificiation are greatly improved thanks to a new auto-threshold image processing algorithm. Particle identification on a challenging ion image (figure aside) shows that the new algorithm is able to separate nearby particles and to identify all particles including the smaller ones!

 

Used in nuclear safeguards & forensics, environmental studies, cosmochemistry, as well as cell & microbiology, the APM software is compatible with several CAMECA SIMS models including IMS 1280/1280-HRNanoSIMS and IMS 7f/6f-PC. For more information on the auto-threshold algorithm, you may request a pdf of the SIMS XVIII presentation by Dr P. Peres. More details on APM are also available on http://www.cameca.com/support/apm.aspx.

 


IMS 1280-HR: IMPROVED PRECISION & THROUGHPUT
THANKS TO NEW SAMPLE HOLDER

The IMS 1280-HR (and previous IMS 1280 instruments) can be equipped of a new sample holder with larger front surface size.

sample-holderThis holder reduces the geometrical X-Y effects that are known to limit the reproducibility for stable isotope analysis. Oxygen isotope ratio analyses performed up to 8mm from the center show an excellent spot-to-spot reproducibility: below 0.2 permil. The new holder also significantly increases the available area on the sample, and the number of samples that can be analyzed in automated mode (possibly overnight). Precision is improved & throughput is increased!
Results were presented at the 6th Biennial Geochemical SIMS Workshop, in Hawaii in November, you may request a pdf of the presentation.



SIMS DEPTH PROFILING WITH SUB-NANOMETER DEPTH RESOLUTION

The CAMECA IMS Wf / SC Ultra now offers Extreme Low Impact Energy (EXLIE) SIMS conditions that give access to ultra high resolution depth profiling. By reducing the impact energy, depth resolution is continuously improved, reaching sub-nm levels while maintaining excellent detection limits!
EXLIE

 

EXLIE depth profiles on a Boron 200eV implant with 3nm thermal oxide layer clearly surpass the results obtained using the common PCOR method.

Further results were presented at the SIMS XVIII conference by Dr A. Merkulov. Full paper is available on request.

IMS 7f , IMS Wf/SC Ultra:

SUPPORTING

CLEAN ENERGY R&D

PVSeveral of our most recent IMS 7f and IMS Wf customers are world-leading companies and research institutes in solar energy and LED lighting:

-> The Engineering Research Center for Luminescence Materials & Devices at Nanchang University, China just took delivery of its instrument.

-> Two other major players in the Asian LED and PV cell industry also selected the IMS 7f and IMS Wf, confirming the great potential of our SIMS instruments to boost R&D and improve product performance of PV and LED devices.


IMS 1280-HR:
THE MARKET LEADING ULTRA HIGH SENSITIVITY SIMS

We have recieved several orders for the latest model of our large geometry SIMS, the IMS 1280-HR. These succeses confirm our leadership in the fields of stable isotope analysis, in-situ geochronology and small particle analysis. Among our new customers: the Institute of Mineralogy and Geology at University of Lausanne, Switzerland, led by Prof. Lukas Baumgartner, focusing, among others, on the interpretation of ages in metamorphic rocks.

 

NanoSIMS 50L
INCREASING ADOPTION FROM THE SCIENTIFIC COMMUNITY

We are extremely proud to have received several NanoSIMS 50L orders in 2011 from prestigious institutions including the University of Tokyo for wood studies, JAMSTEC in Japan for marine microbiology studies, Pacific Northwest National Laboratory in USA for bio-geochemistry and materials, and University of Utrecht in the Netherlands for geochemistry...

What's more, remarkable papers including NanoSIMS measurements were recently published in high profile journals, illustrating the varied capabilities of the NanoSIMS… and the talents of our users!
-> Microfossils of sulphur-metabolizing cells in 3.4-billion-year-old rocks of Western Australia. D. Wacey et al., NATURE GEOSCIENCE, Published online 21 Aug 2011
-> High Pre-Eruptive Water Contents Preserved in Lunar Melt Inclusions. Erik H. Hauri et al., SCIENCE, Published online May 26 2011.


NanoSIMS 50L:

INSTRUMENTAL IMPROVEMENTS

-> Full control of the NanoSIMS through the internet: once the sample holder has been transfered in the analysis chamber, stage travels, selection of analysis positions, tuning and acquisition can be monitored from a remote computer.

-> The upper part of the primary ion column has been redesigned, allowing the instrument to reach higher primary beam current (Cs+ Ip > 2nA for spot < 1µm and Ip >10nA for spot <3µm). This allows a better use of the seven possible Faraday Cups with isotopic ratio reproducibility in the range of only a few tenths per mil.

 
CAMECA Science and Metrology Solutions - A member of AMETEK Materials Analysis Division
29, quai des Grésillons - 92622 Gennevilliers Cedex - Tel. +33 1 43 34 62 00 - www.cameca.com
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